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MOSFET Saturation Current Calculator
Calculate drain saturation current for field-effect transistors
Formula: $I_D = \frac{1}{2} k_n (V_{GS} - V_{th})^2$
Where $k_n$ is the process transconductance parameter, $V_{GS}$ is gate-source voltage, and $V_{th}$ is threshold voltage.
Where $k_n$ is the process transconductance parameter, $V_{GS}$ is gate-source voltage, and $V_{th}$ is threshold voltage.
Transistor Parameters
Calculation Results
⚠️ For semiconductor electronics and physics education reference only. Assumes ideal square-law saturation region behavior.